 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1432 is Pb-free (meets ROHS & Sony 259 specifications). AOL1432L is a Green Product ordering option. AOL1432 and AOL1432L are electrically identical. Features VDS (V) =25V ID = 44 A (VGS = 10V) RDS(ON) < 8.5 m (VGS = 10V) RDS(ON) < 14 m (VGS = 4.5V) Ultra SO-8TM Top View D Fits SOIC8 footprint ! D S G Bottom tab connected to drain G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Maximum Symbol VDS Drain-Source Voltage 25 VGS Gate-Source Voltage 20 TC=25C 44 Continuous Drain Current TC=100C 31 ID Pulsed Drain Current Continuous Drain Current G Avalanche Current C C C Units V V A IDM IDSM IAR EAR PD PDSM TJ, TSTG TA=25C TA=70C 100 12 9 25 94 30 15 2.1 1.3 -55 to 175 A A mJ W W C Repetitive avalanche energy L=0.3mH TC=25C B Power Dissipation TC=100C TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 14.2 48 3.5 Max 20 60 5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1432 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=10A Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 1 100 1.8 6.5 9.5 11.5 35 0.72 Min 25 1 5 100 3 8.5 12 14 1 55 1716 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1430 319 215 1.2 26.4 13.5 3.9 7.75 6.5 10 22.7 6.2 23.06 15.25 2 32 VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.6, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 27.5 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005 Alpha & Omega Semiconductor, Ltd. AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID (A) 40 3.5V 20 3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 VGS=4.5V Normalized On-Resistance 16 14 RDS(ON) (m) 12 10 8 6 4 2 0 0 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 20 VGS=10V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V, 20A 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 10 10V 6V 7V 40 ID(A) VGS=4V 30 125C 20 25C 5V 4.5V 60 50 VDS=5V VGS=10V, 20A 30 ID=20A 25 20 RDS(ON) (m) 15 10 25C 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=20A Capacitance (pF) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Crss Coss Ciss 8 VGS (Volts) 6 4 2 1000.0 TJ(Max)=175C, 10s Power (W) 100s 200 160 120 80 40 0 0.0001 TJ(Max)=175C TC=25C 100.0 ID (Amps) 10.0 RDS(ON) limited 1.0 10ms 1m DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1432 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 ID(A), Peak Avalanche Current 40 30 TA=25C 20 10 0 0.00001 40 Power Dissipation (W) 30 20 10 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 40 Current rating ID(A) Power (W) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 30 20 10 0 0.001 TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 0.01 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AOL1432
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |